In the present work, we have investigated magneto-transport properties of Co15Cu85 thin film deposited using DC-magnetron sputtering system on Si wafer. The magneto-transport properties of as- deposited film (24nm) were characterized at low temperature using four probe method. The calculated value of the resistivity was found increase at low temperatures region. In summary, the increase in resistance (as compare to room temperature) behavior observed in as-deposited Co15Cu85 film is concluded as anomalous Hall effect behavior at low temperatures. The change in resistance is generally attributed to spin orbit coupling and scattering of electrons.
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